Development of an Improved Zinc Oxide Thin Film Transistor for Next Generation Smartphone Display Technologies

Abstract

The study aims to create a portable and highly efficient Zinc Oxide (ZnO) Thin Film Transistor (TFT) on a single crystal Silicon substrate, followed by necessary electrical characterizations. The research explores relevant studies from around the world. The thin film transistor has garnered attention worldwide due to its potential application in flat panel displays. The electrical and optoelectronic properties of ZnO-based TFT have also attracted significant interest. The figure of merit of a Thin Film Transistor is strongly influenced by crucial parameters such as on/off current ratio and field-dependent mobility, both of which are dependent on Transistor geometry, the crystallinity of the active layer, and the quality of the interface (such as semiconductor-insulator interface or metal-semiconductor interface). The growth and processing conditions of different layers impact these variables as well. The study presents the development of a low-powered and flexible efficient bottom gate ZnO Thin Film Transistor on a p-type single crystal Silicon substrate for next-generation laptop and mobile display segments. In this context, RF magnetron sputtering was used to create a bottom-gate ZnO-based Thin-film Transistor (ZnO-TFT) at room temperature. The ZnO-TFT operates in depletion mode with a threshold voltage of -1.2 V and exhibits a drain current on/off current ratio of 2 x 108. Maximum saturation mobility of 48 cm2/V-sec was recorded at VGS=24.1 V and VDS=10 V. This research study can be an opportunity for future researchers working in flexible smart panel display driving circuits.